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| IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII Electrically Similar to the Popular 2N6107 70 VCEO(sus) 7 A Rated Collector Current No Isolating Washers Required Reduced System Cost High Current Gain-Bandwidth Product fT = 4 MHz (Min) Ca, IC = 500 mAdc * UL Recognized, File #E69369, to 3500 VRMS Isolation * * * * * * * Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location beneath the die), the device mounted on a heatsink with thermal grease and a mounting torque of 6 in. lbs. (1) Proper strike and creepage distance must be provided. (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data Designed for general-purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. For Isolated Package Applications Power Transistor SEMICONDUCTOR TECHNICAL DATA MOTOROLA THERMAL CHARACTERISTICS MAXIMUM RATINGS REV 1 Lead Temperature for Soldering Purpose Thermal Resistance, Junction to Case* Thermal Resistance, Junction to Ambient Operating and Storage Junction Temperature Range Total Power Dissipation @ TA = 25_C Derate above 25_C Total Power Dissipation* @ TC = 25_C Derate above 25_C Base Current Collector Current -- Continuous Peak RMS Isolation Voltage (1) (for 1 sec, R.H. < 30%, TA = 25_C) Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Characteristic Rating Test No. 1 Per Fig. 13 Test No. 2 Per Fig. 14 Test No. 3 Per Fig. 15 Symbol Symbol TJ, Tstg VISOL VCEO RJC RJA VCB VEB PD PD TL IC IB PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS MJF6107 - 65 to + 150 CASE 221D-02 TO-220 TYPE Value 2 0.016 Order this document by MJF6107/D 4500 3500 1500 62.5 Max 34 0.27 260 3.7 7 10 80 70 3 5 VRMS Watts W/_C Watts W/_C _C/W _C/W Unit Unit Adc Adc Vdc Vdc Vdc _C _C 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII III I I I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII MJF6107 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) OFF CHARACTERISTICS DC Current Gain (IC = 2 Adc, VCE = 4 Vdc) DC Current Gain (IC = 7 Adc, VCE = 4 Vdc) Small-Signal Current Gain (IC = 0.5 Adc, VCE = 4 Vdc, f = 50 kHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz) Current Gain-Bandwidth Product (2) (IC = 500 mAdc, VCE = 4 Vdc, ftest = 1 MHz) Base-Emitter On Voltage (IC = 7 Adc, VCE = 4 Vdc) Collector-Emitter Saturation Voltage (IC = 7 Adc, IB = 3 Adc) Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) Collector Cutoff Current (VCE = 80 Vdc, VEB(off) = 1.5 Vdc) Collector Cutoff Current (VCE = 80 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (1) (IC = 100 mAdc, IB = 0) NOTES: 1. Pulse Test: Pulse Width 2. fT = |hfe| * ftest. 2 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) +11 V 0 tr, tf 10 ns DUTY CYCLE = 1.0% 0.01 0.1 0.02 0.05 0.03 0.1 0.2 0.3 0.5 1 25 s v 300 s, Duty Cycle v 2%. RB Characteristic RC VCC + 30 V SCOPE t, TIME ( s) -9 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA Figure 1. Switching Time Test Circuit 0.2 0.3 0.5 51 1 SINGLE PULSE RJC(t) = r(t) RJC TJ(pk) - TC = P(pk) RJC(t) -4 V 2 D1 3 5 Figure 3. Thermal Response 10 50 20 30 t, TIME (ms) 0.03 0.02 0.07 0.1 0.1 0.07 0.05 0.3 0.2 0.7 0.5 1 2 100 0.2 0.3 0.5 1 2 IC, COLLECTOR CURRENT (AMP) 200 300 VCEO(sus) VCE(sat) VBE(on) Symbol Motorola Bipolar Power Transistor Device Data Figure 2. Turn-On Time IEBO ICEX ICES Cob hFE hfe fT 500 Min 1K 20 30 5 70 -- -- -- -- -- -- 4 tr td @ VBE(off) 5 V 2K Max 250 90 -- 3K -- -- -- 2 2 1 1 1 3 TJ = 25C VCC = 30 V IC/IB = 10 5K 5 Adc Adc Adc MHz Unit Vdc Vdc Vdc pF -- -- 10K 7 MJF6107 15 10 IC, COLLECTOR CURRENT (AMPS) 7 5 3 2 1 0.7 0.5 0.3 0.2 0.15 1 dc 0.1 ms 0.5 ms 50 s CURRENT LIMIT SECONDARY BREAKDOWN LIMIT THERMAL LIMIT @ TC = 25C (SINGLE PULSE) 2 3 5 7 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. v Figure 4. Active-Region Safe Operating Area 5 3 2 ts t, TIME ( s) 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.07 0.1 tf TJ = 25C VCC = 30 V IC/IB = 10 IB1 = IB2 300 TJ = 25C 200 C, CAPACITANCE (pF) Cib 100 70 50 Cob 0.2 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMP) 5 7 30 0.5 1 2 3 5 10 20 VR, REVERSE VOLTAGE (VOLTS) 30 50 Figure 5. Turn-Off Time Figure 6. Capacitance VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 300 200 hFE , DC CURRENT GAIN 100 70 50 30 20 10 7 5 0.07 0.1 - 55C TJ = 150C 25C VCE = 2 V 2 TJ = 25C 1.6 IC = 1 A 1.2 2.5 A 5A 0.8 0.4 0 0.2 0.3 0.5 0.7 1 2 3 5 7 10 20 30 50 100 200 300 500 1000 IC, COLLECTOR CURRENT (AMP) IB, BASE CURRENT (mA) Figure 7. DC Current Gain Figure 8. Collector Saturation Region Motorola Bipolar Power Transistor Device Data 3 MJF6107 V, TEMPERATURE COEFFICIENTS (mV/C) 2 TJ = 25C 1.6 V, VOLTAGE (VOLTS) + 2.5 +2 + 1.5 +1 + 0.5 0 - 0.5 -1 - 1.5 -2 - 2.5 0.07 0.1 VB FOR VBE *VC FOR VCE(sat) - 55C to + 25C + 25C to +150C - 55C to + 25C 3 5 7 + 25C to +150C *APPLIES FOR IC/IB < hFE/4 1.2 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 4 V 0.4 VCE(sat) = IC/IB = 10 0 0.07 0.1 0.2 0.3 0.5 1 2 3 IC, COLLECTOR CURRENT (AMP) 5 7 0.2 0.3 0.5 1 2 IC, COLLECTOR CURRENT (AMP) Figure 9. "On" Voltages R BE, EXTERNAL BASE-EMITTER RESISTANCE (OHMS) Figure 10. Temperature Coefficients 103 IC, COLLECTOR CURRENT ( A) 102 101 100 10-1 10-2 REVERSE IC = ICES FORWARD VCE = 30 V TJ = 150C 100C 10 M VCE = 30 V 1M IC = 10 x ICES IC = 2 x ICES 100 k IC = ICES 10 k 25C 1k (TYPICAL ICES VALUES OBTAINED FROM FIGURE 11) 40 60 80 100 120 TJ, JUNCTION TEMPERATURE (C) 140 160 10-3 - 0.3 - 0.2 - 0.1 0 + 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6 + 0.7 VBE, BASE-EMITTER VOLTAGE (VOLTS) 0.1 k 20 Figure 11. Collector Cut-Off Region Figure 12. Effects of Base-Emitter Resistance 4 Motorola Bipolar Power Transistor Device Data MJF6107 TEST CONDITIONS FOR ISOLATION TESTS* MOUNTED FULLY ISOLATED PACKAGE LEADS MOUNTED FULLY ISOLATED PACKAGE MOUNTED FULLY ISOLATED PACKAGE CLIP CLIP 0.107" MIN LEADS 0.107" MIN LEADS HEATSINK 0.110" MIN HEATSINK HEATSINK Figure 13. Clip Mounting Position for Isolation Test Number 1 Figure 14. Clip Mounting Position for Isolation Test Number 2 Figure 15. Screw Mounting Position for Isolation Test Number 3 * Measurement made between leads and heatsink with all leads shorted together MOUNTING INFORMATION 4-40 SCREW PLAIN WASHER CLIP HEATSINK COMPRESSION WASHER NUT HEATSINK Figure 16. Typical Mounting Techniques* Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4-40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4-40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. ** For more information about mounting power semiconductors see Application Note AN1040. Motorola Bipolar Power Transistor Device Data 5 MJF6107 PACKAGE DIMENSIONS -T- F Q A 123 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.621 0.629 0.394 0.402 0.181 0.189 0.026 0.034 0.121 0.129 0.100 BSC 0.123 0.129 0.018 0.025 0.500 0.562 0.045 0.060 0.200 BSC 0.126 0.134 0.107 0.111 0.096 0.104 0.259 0.267 MILLIMETERS MIN MAX 15.78 15.97 10.01 10.21 4.60 4.80 0.67 0.86 3.08 3.27 2.54 BSC 3.13 3.27 0.46 0.64 12.70 14.27 1.14 1.52 5.08 BSC 3.21 3.40 2.72 2.81 2.44 2.64 6.58 6.78 -B- C S U H K -Y- G N L D 3 PL M J R 0.25 (0.010) B M Y STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER CASE 221D-02 TO-220 TYPE ISSUE D Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Bipolar Power Transistor Device Data *MJF6107/D* MJF6107/D |
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